2SJ325-Z - P-CHANNEL POWER MOSFET

Renesas

Download the 2SJ325-Z datasheet PDF. This datasheet also covers the 2SJ325 variant, as both devices belong to the same p-channel power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

solenoid, motor and lamp driver.

Key Features

Low On-state Resistance RDS(on) = 0.08 Ω TYP. (VGS =.
10 V, ID =.
2.0 A) RDS(on) = 0.15 Ω TYP. (VGS =.
4 V, ID =.
1.6 A).
Low Ciss: Ciss = 800 pF TYP.
Built-in G-S Gate Protection Diode.

📥 Download Datasheet

2SJ325-Z p-channel power mosfet by Renesas - Datasheet Preview — Note: The manufacturer provides a single datasheet file (2SJ325-Renesas.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	2SJ325-Z
Manufacturer	Renesas
File Size	1.86 MB
Description	P-CHANNEL POWER MOSFET
Datasheet	2SJ325-Z Datasheet

📁 Similar Datasheet

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2SJ325-Z	P-Channel MOSFET	NEC
2SJ325	P-Channel MOSFET	NEC
2SJ325	MOS Field Effect Power Transistors	Kexin
2SJ325	30V P-Channel MOSFET	VBsemi
2SJ320	P-Channel MOSFET	Sanyo Semicon Device

Other Datasheets by Renesas

Part Number	Description
2SJ325	P-CHANNEL POWER MOSFET
2SJ324	P-CHANNEL POWER MOSFET
2SJ324-Z	P-CHANNEL POWER MOSFET
2SJ350	Silicon P-Channel MOSFET
2SJ358C	P-CHANNEL MOSFET FOR SWITCHING

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ325,325-Z SWITCHING P-CHANNEL POWER MOS FET DESCRIPTION The 2SJ325 is P-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver. FEATURES • Low On-state Resistance RDS(on) = 0.08 Ω TYP. (VGS = −10 V, ID = −2.0 A) RDS(on) = 0.15 Ω TYP. (VGS = −4 V, ID = −1.6 A) • Low Ciss: Ciss = 800 pF TYP. • Built-in G-S Gate Protection Diode ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage VDSS −30 V Gate to Source Voltage (AC) VGSS(AC) m20 V Gate to Source Voltage (DC) VGSS(DC) −20, +10 V Drain Current (DC) Drain Current (pulse) Note ID(DC) m4.0 A ID(pulse) m16 A Total Power Dissipation (TC = 25°C) PT1 20 W Total Power Dissipation (TA = 25°C) PT2 1.