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2SJ325 - MOS Field Effect Power Transistors

Key Features

  • Low on-state resistance RDS(on)=83m (VGS=-10V,ID=-2A) RDS(on)=0.15 (VGS=-4V,ID=-1.6A) Built-in G-S Gate Protection Diode +0.2 9.70 -0.2 TO-252 6.50+0.15 -0.15 5.30+0.2 -0.2 2.30+0.1 -0.1 0.50+0.8 -0.7 Unit: mm +0.15 1.50 -0.15 3.80 +0.15 5.55 -0.15 0.80+0.1 -0.1 0.127 max 2.3 4.60+0.15 -0.15 0.60+0.1 -0.1 +0.15 0.50 -0.15 +0.28 1.50 -0.1 +0.25 2.65 -0.1 1 Gate 2 Drain 3 Source Absolute Maximum Ratings Ta = 25 Parameter Drain to source voltage Gate to source voltage (DC) Gate to.

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SMD Type MOSFICET MOS Field Effect Power Transistors 2SJ325 Features Low on-state resistance RDS(on)=83m (VGS=-10V,ID=-2A) RDS(on)=0.15 (VGS=-4V,ID=-1.6A) Built-in G-S Gate Protection Diode +0.2 9.70 -0.2 TO-252 6.50+0.15 -0.15 5.30+0.2 -0.2 2.30+0.1 -0.1 0.50+0.8 -0.7 Unit: mm +0.15 1.50 -0.15 3.80 +0.15 5.55 -0.15 0.80+0.1 -0.1 0.127 max 2.3 4.60+0.15 -0.15 0.60+0.1 -0.1 +0.15 0.50 -0.15 +0.28 1.50 -0.1 +0.25 2.65 -0.1 1 Gate 2 Drain 3 Source Absolute Maximum Ratings Ta = 25 Parameter Drain to source voltage Gate to source voltage (DC) Gate to source voltage (AC) Drain current (DC) Drain current(pulse) * Power dissipation TC=25 TA=25 Channel temperature Storage temperature Symbol Rating Unit VDSS -30 V VGSS -20,+10 V VGSS 20 V ID 4.