2SK1168 - Silicon N-Channel MOSFET

Renesas

Download the 2SK1168 datasheet PDF. This datasheet also covers the 2SK1167 variant, as both devices belong to the same silicon n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

Low on-resistance.
High speed switching.
Low drive current.
No secondary breakdown.
Suitable for switching regulator and DC-DC converter Outline.

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2SK1168 silicon n-channel mosfet by Renesas - Datasheet Preview — Note: The manufacturer provides a single datasheet file (2SK1167-Renesas.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	2SK1168
Manufacturer	Renesas
File Size	154.36 KB
Description	Silicon N-Channel MOSFET
Datasheet	2SK1168 Datasheet

📁 Similar Datasheet

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2SK1168	Silicon N-Channel MOSFET	Hitachi Semiconductor
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Other Datasheets by Renesas

Part Number	Description
2SK1160	Silicon N-Channel MOSFET
2SK1161	Silicon N-Channel MOSFET
2SK1162	Silicon N-Channel MOSFET
2SK1167	Silicon N-Channel MOSFET
2SK1169	Silicon N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

2SK1167, 2SK1168 Silicon N Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) 1 2 3 REJ03G0915-0200 (Previous: ADE-208-1253) Rev.2.00 Sep 07, 2005 D G 1. Gate 2. Drain (Flange) 3. Source S Rev.2.00 Sep 07, 2005 page 1 of 6 2SK1167, 2SK1168 Absolute Maximum Ratings Item Drain to source voltage 2SK1167 2SK1168 Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2.