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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2109
N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING
The 2SK2109 is a N-channel MOS FET of a vertical type and is a switching element that can be directly driven by the output of an IC operating at 5 V.
This product has a low ON resistance and superb switching characteristics and is ideal for driving the actuator, such as motors and DC/DC converters.
FEATURES • Low ON resistance
RDS(on) = 1.0 Ω MAX. @VGS = 4.0 V, ID = 0.3 A • High switching speed
ton + toff < 100 ns • Low parasitic capacitance
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
PACKAGE DIMENSIONS (in mm)
4.5 ± 0.1 1.6 ± 0.2
1.5 ± 0.1
0.8 MIN. 2.5 ± 0.1
4.0 ± 0.25
SDG
0.42 ±0.06 1.5
0.42 0.47 ±0.06 ±0.06
3.0
0.41+–00..
2SK2109 Datasheet
