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2SK2138-Z - N-Channel Power MOSFET

Download the 2SK2138-Z datasheet PDF. This datasheet also covers the 2SK2138 variant, as both devices belong to the same n-channel power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

Transistor designed for high voltage switching applications.

Key Features

  • Low On-state Resistance RDS(on) = 2.4 Ω MAX. (VGS = 10 V, ID = 2.5 A).
  • Low Ciss Ciss = 550 pF TYP.
  • High Avalanche Capability Ratings.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (2SK2138-Renesas.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number 2SK2138-Z
Manufacturer Renesas
File Size 166.32 KB
Description N-Channel Power MOSFET
Datasheet download datasheet 2SK2138-Z Datasheet

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Other Datasheets by Renesas

Part Number Description
2SK2138 N-Channel Power MOSFET
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2138, 2SK2138-Z SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2138, 2SK2138-Z is N-channel Power MOS Field Effect Transistor designed for high voltage switching applications. FEATURES • Low On-state Resistance RDS(on) = 2.4 Ω MAX. (VGS = 10 V, ID = 2.5 A) • Low Ciss Ciss = 550 pF TYP. • High Avalanche Capability Ratings ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) Drain to Source Voltage VDSS 600 V Gate to Source Voltage VGSS ±30 V Drain Current (DC) ID(DC) ±5.0 A Drain Current (pulse)* ID(pulse) ±20 A Total Power Dissipation (Tc = 25 ˚C) PT1 70 W Total Power Dissipation (TA = 25 ˚C) PT2 1.