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2SK2138 - N-Channel Power MOSFET

General Description

Transistor designed for high voltage switching applications.

Key Features

  • Low On-state Resistance RDS(on) = 2.4 Ω MAX. (VGS = 10 V, ID = 2.5 A).
  • Low Ciss Ciss = 550 pF TYP.
  • High Avalanche Capability Ratings.

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Datasheet Details

Part number 2SK2138
Manufacturer Renesas
File Size 166.32 KB
Description N-Channel Power MOSFET
Datasheet download datasheet 2SK2138 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2138, 2SK2138-Z SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2138, 2SK2138-Z is N-channel Power MOS Field Effect Transistor designed for high voltage switching applications. FEATURES • Low On-state Resistance RDS(on) = 2.4 Ω MAX. (VGS = 10 V, ID = 2.5 A) • Low Ciss Ciss = 550 pF TYP. • High Avalanche Capability Ratings ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) Drain to Source Voltage VDSS 600 V Gate to Source Voltage VGSS ±30 V Drain Current (DC) ID(DC) ±5.0 A Drain Current (pulse)* ID(pulse) ±20 A Total Power Dissipation (Tc = 25 ˚C) PT1 70 W Total Power Dissipation (TA = 25 ˚C) PT2 1.