2SK2138 - N-Channel Power MOSFET

Renesas

General Description

Transistor designed for high voltage switching applications.

Key Features

Low On-state Resistance RDS(on) = 2.4 Ω MAX. (VGS = 10 V, ID = 2.5 A).
Low Ciss Ciss = 550 pF TYP.
High Avalanche Capability Ratings.

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2SK2138 n-channel power mosfet by Renesas - Datasheet Preview

Datasheet Details

Part number	2SK2138
Manufacturer	Renesas
File Size	166.32 KB
Description	N-Channel Power MOSFET
Datasheet	2SK2138 Datasheet

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Other Datasheets by Renesas

Part Number	Description
2SK2138-Z	N-Channel Power MOSFET
2SK2109	N-CHANNEL MOSFET
2SK2110	N-CHANNEL MOSFET
2SK2112	N-CHANNEL MOSFET
2SK2114	Silicon N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2138, 2SK2138-Z SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2138, 2SK2138-Z is N-channel Power MOS Field Effect Transistor designed for high voltage switching applications. FEATURES • Low On-state Resistance RDS(on) = 2.4 Ω MAX. (VGS = 10 V, ID = 2.5 A) • Low Ciss Ciss = 550 pF TYP. • High Avalanche Capability Ratings ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) Drain to Source Voltage VDSS 600 V Gate to Source Voltage VGSS ±30 V Drain Current (DC) ID(DC) ±5.0 A Drain Current (pulse)* ID(pulse) ±20 A Total Power Dissipation (Tc = 25 ˚C) PT1 70 W Total Power Dissipation (TA = 25 ˚C) PT2 1.