2SK3325B
Overview
- Low gate charge QG = 20 nC TYP. (ID = 10 A, VDD = 400 V, VGS = 10 V)
- Gate voltage rating : ±30 V
- Low on-state resistance RDS(on) = 0.85 Ω MAX. (VGS = 10 V, ID = 5.0 A)
- Avalanche capability ratings
Related Datasheets
| Part Number | Manufacturer | Description |
|---|---|---|
| 2SK3325 | Kexin Semiconductor | MOS Field Effect Transistor |
| 2SK3325 | NEC | N-Channel MOSFET |
| 2SK3326 | NEC | N-Channel MOSFET |
| 2SK3322 | NEC | SWITCHING N-CHANNEL POWER MOSFET |
| K3326 | NEC | 2SK3326 |