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2SK3325B - N-Channel MOSFET

General Description

The 2SK3325B is N-channel MOSFET device that

Key Features

  • a low gate charge and excellent switching characteristics, and designed for high voltage.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3325B SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION The 2SK3325B is N-channel MOSFET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES • Low gate charge QG = 20 nC TYP. (ID = 10 A, VDD = 400 V, VGS = 10 V) • Gate voltage rating : ±30 V • Low on-state resistance RDS(on) = 0.85 Ω MAX. (VGS = 10 V, ID = 5.0 A) • Avalanche capability ratings ORDERING INFORMATION PART NUMBER 2SK3325B-S19-AY Note 2SK3325B-ZK-E1-AY Note 2SK3325B-ZK-E2-AY Note LEAD PLATING Pure Sn (Tin) Pure Sn (Tin) Pure Sn (Tin) PACKING Tube 50 p/tube Tape 800 p/reel Tape 800 p/reel Note Pb-free (This product dose not contain Pb in external electrode.