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2SK3419
Silicon N Channel MOS FET High Speed Power Switching
Features
• Low on-resistance RDS (on) = 4.3 mΩ typ.
• 4 V gate drive device • High speed switching
Outline
RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P)
D
1 2 3
G S
REJ03G1099-0200 (Previous: ADE-208-942)
Rev.2.00 Sep 07, 2005
1. Gate 2. Drain (Flange) 3. Source
Rev.2.00 Sep 07, 2005 page 1 of 7
2SK3419
Absolute Maximum Ratings
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tc = 25°C 3.
2SK3419 Datasheet
