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2SK3435 - N-CHANNEL POWER MOSFET

General Description

designed for high current switching applications.

Key Features

  • Super low on-state resistance RDS(on)1 = 14 mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 22 mΩ MAX. (VGS = 4.0 V, ID = 40 A).
  • Low Ciss: Ciss = 3200 pF TYP.
  • Built-in gate protection diode.

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Datasheet Details

Part number 2SK3435
Manufacturer Renesas
File Size 129.81 KB
Description N-CHANNEL POWER MOSFET
Datasheet download datasheet 2SK3435 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3435 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3435 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance RDS(on)1 = 14 mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 22 mΩ MAX. (VGS = 4.0 V, ID = 40 A) • Low Ciss: Ciss = 3200 pF TYP. • Built-in gate protection diode ORDERING INFORMATION PART NUMBER PACKAGE 2SK3435 TO-220AB 2SK3435-S TO-262 2SK3435-ZJ 2SK3435-Z TO-263 TO-220SMD Note Note TO-220SMD package is produced only in Japan.