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2SK3435 - N-Channel MOSFET

General Description

The 2SK3435 is N-channel MOS Field Effect Transistor designed for high current switching applications.

Key Features

  • Super low on-state resistance: RDS(on)1 = 14 mΩ MAX. (VGS = 10 V, ID = 40 A) 5 RDS(on)2 = 22 mΩ MAX. (VGS = 4.0 V, ID = 40 A).
  • Built-in gate protection diode 5.
  • Low Ciss: Ciss = 3200 pF TYP. (TO-220AB).

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PRELIMINARY DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3435 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION PART NUMBER 2SK3435 2SK3435-S 2SK3435-Z PACKAGE TO-220AB TO-262 TO-220SMD DESCRIPTION The 2SK3435 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on)1 = 14 mΩ MAX. (VGS = 10 V, ID = 40 A) 5 RDS(on)2 = 22 mΩ MAX. (VGS = 4.0 V, ID = 40 A) • Built-in gate protection diode 5 • Low Ciss: Ciss = 3200 pF TYP. (TO-220AB) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse) Note1 VDSS VGSS ID(DC) ID(pulse) PT PT Tch Tstg Note2 Note2 60 ±20 ±80 ±320 84 1.