| Part Number | 2SK3435 |
|---|---|
| Manufacturer | Kexin Semiconductor |
| Overview | SMD Type MOSFET MOS Field Effect Transistor 2SK3435 Features Super low on-state resistance: RDS(on)1 = 14m MAX. (VGS = 10 V, ID = 40A) RDS(on)2 =22 m MAX. (VGS = 4 V, ID = 40A) Low Ciss: Ciss =3200. Super low on-state resistance: RDS(on)1 = 14m MAX. (VGS = 10 V, ID = 40A) RDS(on)2 =22 m MAX. (VGS = 4 V, ID = 40A) Low Ciss: Ciss =3200 pF TYP. Built-in gate protection diode Absolute Maximum Ratings Ta = 25 Parameter Drain to source voltage Gate to source voltage Drain current Power dissipation TC. |
2SK3435 Datasheet
The 2SK3435 is a MOS Field Effect Transistor.
| Part Number | 2SK3435 |
|---|---|
| Description | N-CHANNEL POWER MOSFET |
| Manufacturer | Renesas |
| Overview |
The 2SK3435 is N-channel MOS Field Effect Transistor
designed for high current switching applications.
FEATURES • Super low on-state resistance
RDS(on)1 = 14 mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 =.
* Super low on-state resistance RDS(on)1 = 14 mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 22 mΩ MAX. (VGS = 4.0 V, ID = 40 A) * Low Ciss: Ciss = 3200 pF TYP. * Built-in gate protection diode ORDERING INFORMATION PART NUMBER PACKAGE 2SK3435 TO-220AB 2SK3435-S TO-262 2SK3435-ZJ 2SK3435-Z TO-26. |
| Part Number | 2SK3435 |
|---|---|
| Description | N-Channel MOSFET |
| Manufacturer | NEC |
| Overview |
The 2SK3435 is N-channel MOS Field Effect Transistor designed for high current switching applications.
FEATURES
• Super low on-state resistance: RDS(on)1 = 14 mΩ MAX. (VGS = 10 V, ID = 40 A) 5 RDS(on.
* Super low on-state resistance: RDS(on)1 = 14 mΩ MAX. (VGS = 10 V, ID = 40 A) 5 RDS(on)2 = 22 mΩ MAX. (VGS = 4.0 V, ID = 40 A) * Built-in gate protection diode 5 * Low Ciss: Ciss = 3200 pF TYP. (TO-220AB) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage Gate to Source Voltage Drain Cu. |
| Part Number | 2SK3435 |
|---|---|
| Description | N-Channel MOSFET Transistor |
| Manufacturer | Inchange Semiconductor |
| Overview |
·motor drive, DC-DC converter, power switch
and solenoid drive.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
60
V
VGS
Gate-Source Voltage-Continuou.
*Drain Current : ID= 80A@ TC=25℃ *Drain Source Voltage : VDSS= 60V(Min) *Static Drain-Source On-Resistance : RDS(on) = 14mΩ(Max) @ VGS= 10V *100% avalanche tested *Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION *motor drive, DC-DC converter, power swi. |