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2SK3432 - N-Channel MOSFET

General Description

The 2SK3432 is N-channel MOS Field Effect Transistor designed for high current switching applications.

Key Features

  • Super low on-state resistance: 5 5 RDS(on)1 = 4.0 mΩ MAX. (VGS = 10 V, ID = 42 A) RDS(on)2 = 6.9 mΩ MAX. (VGS = 4 V, ID = 42 A).
  • Low Ciss: Ciss = 9500 pF TYP.
  • Built-in gate protection diode (TO-220AB).

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Other Datasheets by NEC (now Renesas Electronics)

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2SK3430 N-Channel MOSFET
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2SK3435 N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PRELIMINARY DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3432 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION PART NUMBER 2SK3432 2SK3432-S 2SK3432-Z PACKAGE TO-220AB TO-262 TO-220SMD DESCRIPTION The 2SK3432 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: 5 5 RDS(on)1 = 4.0 mΩ MAX. (VGS = 10 V, ID = 42 A) RDS(on)2 = 6.9 mΩ MAX. (VGS = 4 V, ID = 42 A) • Low Ciss: Ciss = 9500 pF TYP. • Built-in gate protection diode (TO-220AB) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse) Note1 VDSS VGSS ID(DC) ID(pulse) PT PT Tch Tstg Note2 Note2 40 ±20 ±83 ±332 100 1.