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2SK3434 - N-Channel MOSFET

General Description

designed for high current switching applications.

Key Features

  • Super low on-state resistance RDS(on)1 = 20 mΩ MAX. (VGS = 10 V, ID = 24 A) RDS(on)2 = 31 mΩ MAX. (VGS = 4.0 V, ID = 24 A).
  • Low Ciss: Ciss = 2100 pF TYP.
  • Built-in gate protection diode.

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Other Datasheets by NEC (now Renesas Electronics)

Part Number Description
2SK3430 N-Channel MOSFET
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3434 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3434 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance RDS(on)1 = 20 mΩ MAX. (VGS = 10 V, ID = 24 A) RDS(on)2 = 31 mΩ MAX. (VGS = 4.0 V, ID = 24 A) • Low Ciss: Ciss = 2100 pF TYP. • Built-in gate protection diode ORDERING INFORMATION PART NUMBER 2SK3434 2SK3434-S 2SK3434-ZJ 2SK3434-Z PACKAGE TO-220AB TO-262 TO-263 TO-220SMDNote Note TO-220SMD package is produced only in Japan.