2SK3434 Datasheet

The 2SK3434 is a MOS Field Effect Transistor.

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Part Number2SK3434
ManufacturerKexin Semiconductor
Overview SMD Type MOS Field Effect Transistor 2SK3434 MOSFET Features Super low on-state resistance: RDS(on)1 = 20m MAX. (VGS = 10 V, ID = 24A) RDS(on)2 = 31 m MAX. (VGS = 4 V, ID = 24A) Low Ciss: Ciss =210. Super low on-state resistance: RDS(on)1 = 20m MAX. (VGS = 10 V, ID = 24A) RDS(on)2 = 31 m MAX. (VGS = 4 V, ID = 24A) Low Ciss: Ciss =2100 pF TYP. Built-in gate protection diode +0.2 5.28 -0.2 +0.2 8.7 -0.2 TO-263 +0.2 4.57 +0.1 -0.2 1.27-0.1 Unit: mm +0.1 1.27 -0.1 +0.2 2.54 -0.2 15.25-+00.
Part Number2SK3434
DescriptionN-Channel MOSFET
ManufacturerNEC
Overview The 2SK3434 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance RDS(on)1 = 20 mΩ MAX. (VGS = 10 V, ID = 24 A) RDS(on)2 =.
* Super low on-state resistance RDS(on)1 = 20 mΩ MAX. (VGS = 10 V, ID = 24 A) RDS(on)2 = 31 mΩ MAX. (VGS = 4.0 V, ID = 24 A)
* Low Ciss: Ciss = 2100 pF TYP.
* Built-in gate protection diode ORDERING INFORMATION PART NUMBER 2SK3434 2SK3434-S 2SK3434-ZJ 2SK3434-Z PACKAGE TO-220AB TO-262 TO-263 TO-2.
Part Number2SK3434
DescriptionN-Channel MOSFET Transistor
ManufacturerInchange Semiconductor
Overview ·motor drive, DC-DC converter, power switch and solenoid drive. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 60 V VGS Gate-Source Voltage-Continuou.
*Drain Current : ID= 48A@ TC=25℃
*Drain Source Voltage : VDSS= 60V(Min)
*Static Drain-Source On-Resistance : RDS(on) = 20mΩ(Max) @ VGS= 10V
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION
*motor drive, DC-DC converter, power swi.