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2SK4146 - MOSFET

General Description

The 2SK4146 is N-channel MOS Field Effect Transistor designed for high current switching applications.

Key Features

  • Low on-state resistance ⎯ RDS(on) = 10.1 mΩ MAX. (VGS = 10 V, ID = 40 A).
  • Low input capacitance ⎯ Ciss = 3500 pF TYP. (VDS = 10 V) Ordering Information Part No. 1 2SK4146-S19-AY ∗ LEAD.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Preliminary Data Sheet 2SK4146 MOS FIELD EFFECT TRANSISTOR Description R07DS0130EJ0100 Rev.1.00 Sep 24, 2010 The 2SK4146 is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance ⎯ RDS(on) = 10.1 mΩ MAX. (VGS = 10 V, ID = 40 A) • Low input capacitance ⎯ Ciss = 3500 pF TYP. (VDS = 10 V) Ordering Information Part No. 1 2SK4146-S19-AY ∗ LEAD PLATING Pure Sn (Tin) PACKING 50 pcs/tube Package TO-220, S19 tube Note: ∗1. Pb-free (This product does not contain Pb in the external electrode.