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6AM11 Datasheet Silicon N-channel/p-channel Power Mos Fet Array

Manufacturer: Renesas

Overview: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp.

Datasheet Details

Part number 6AM11
Manufacturer Renesas
File Size 121.66 KB
Description Silicon N-channel/p-channel Power MOS Fet Array
Datasheet 6AM11_Renesas.pdf

Key Features

  • Low on-resistance N-channel: RDS(on) ≤ 0.17 , VGS = 10 V, I D = 2.5 A P-channel: RDS(on) ≤ 0.2 , VGS =.
  • 10 V, I D =.
  • 2.5 A.
  • Capable of 4 V gate drive.
  • Low drive current.
  • High speed switching.
  • High density mounting.
  • Suitable for H-bridged motor driver 6AM11 Outline SP-12 5 S Pch 6 G 4G 11 G 12 S 12 Nch 2G D3 8 G D7 9 G D 10 34 56 78 9 10 1112 www. DataSheet4U. com S 1 N-ch Source 1. 2, 8, 9 N-ch Gate 3, 7, 10. N-ch Drain.

More Datasheets from Renesas

Part Number Description
6AM12 Silicon N-channel/p-channel Complementary Power MOS Fet Array

6AM11 Distributor