6AM12 - Silicon N-channel/p-channel Complementary Power MOS Fet Array

Datasheet Summary

Features

Low on-resistance N-channel: RDS(on) ≤ 0.17 , VGS = 10 V, I D = 4 A P-channel: RDS(on) ≤ 0.2 , VGS =.
10 V, I D =.
4 A.
Capable of 4 V gate drive.
Low drive current.
High speed switching.
High density mounting.
Suitable for H-bridged motor driver 6AM12 Outline SP-12TA 5 S Pch 6 G 4G D3 8 G D7 9 G D 10 12 3 11 G 12 S Nch 2G 4 5 6 7 8 9 10 1112 www. DataSheet4U. com S 1 N-ch Source 1. 2, 8, 9 N-ch Gate 3, 7, 10. N-ch.

Renesas

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Datasheet Details

Part number	6AM12
Manufacturer	Renesas
File Size	118.66 KB
Description	Silicon N-channel/p-channel Complementary Power MOS Fet Array
Datasheet	6AM12 Datasheet
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6AM11 - Silicon N-channel/p-channel Power MOS Fet Array

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To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) www.DataSheet4U.com Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding.

Published: Jun 26, 2008 |