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C5132A - 2SC5132A

Key Features

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  • High breakdown voltage VCES = 1500 V, IC = 8 A.
  • Built.
  • in damper diode type.
  • Isolated package TO-3P.
  • FM B C 1 E 2 3 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings (Ta = 25°C) Item Collector to emitter voltage Emitter to base voltage Collector current Collector surge current Collector power dissipation Junction temperature Storage temperature Diode current Note: 1. Value at Tc = 25°C Symbol VCES VEBO IC ic(surge) PC.

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2SC5132A Silicon NPN Triple Diffused Planar Application Character display horizontal deflection output TO–3PFM (N) Features www.DataSheet4U.com • High breakdown voltage VCES = 1500 V, IC = 8 A • Built–in damper diode type • Isolated package TO-3P•FM B C 1 E 2 3 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings (Ta = 25°C) Item Collector to emitter voltage Emitter to base voltage Collector current Collector surge current Collector power dissipation Junction temperature Storage temperature Diode current Note: 1.