Renesas Electronics F1129MB
The F1129MB is a single-ended input / differential output 3GHz to 4.2GMHz high gain RF amplifier. The combination of impedance translation, high gain, high linearity, and low noise performance makes this device an ideal amplifier for a variety of receiver applications. The F1129MB has been optimized to operate with a single 5V power supply and a nominal 60mA of ICC.| Part No. | F1129MB |
|---|---|
| Datasheet | F1129MB Download |
| Manufacturer |  Renesas Electronics |
| Description | RF Amplifier |
| Buy | Stock & Price |
DESCRIPTION
When operated at 3.55GHz, the F1129MB provides 19dB typical gain with 1.8dB noise figure and +32dBm OIP3. The F1129MB is pin-compatible with Renesas’ F1129xx family of RF amplifiers, offering additional frequency and output impedance options. Each F1129 variant is packaged in a 2 × 2 mm, 12-pin DFN, with a 50Ω single-ended RF input and 50Ω or 100Ω differential RF output impedances for ease of integration into the signal-path. F1129xx Base Part Number F1129LA F1129LB F1129MA F1129MB F1129HA F1129HB Differential Output Frequency Frequency Impedance Band Coverage 50Ω 100Ω Low 1.4GHz to 3.2GHz 50Ω 100Ω Mid 3.0GHz to 4.2GHz 50Ω 100Ω High 4.0GHz to 6.0GHz Competitive Advantage● High gain
● Excellent gain flatness over frequency
● Outstanding gain variance over temperature
● STBY feature
● Differential output to directly drive transceiver inputs Typical
APPLICATIONS
● 5G / Massive MIMO Base Stations● 4G TDD and FDD Base Stations
● 2G/3G Base Stations
● Repeaters and DAS
● Point to Point Infrastructure
● Public Safety Infrastructure
● Military Handhelds VCC_1 VCC_2 STBY
FEATURES
● RF range: 3.0GHz to 4.2GHz● Gain = 19dB at 3.
