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F1129MB - RF Amplifier

General Description

The F1129MB is a single-ended input / differential output 3GHz to 4.2GMHz high gain RF amplifier.

The combination of impedance translation, high gain, high linearity, and low noise performance makes this device an ideal amplifier for a variety of receiver applications.

Key Features

  • RF range: 3.0GHz to 4.2GHz.
  • Gain = 19dB at 3.55GHz.
  • Noise figure = 1.8dB at 3.55GHz.
  • OIP3 = +32dBm at 3.55GHz.
  • Output P1dB = +18dBm at 3.55GHz.
  • Gain variation over temperature = ±0.15dB typical.
  • 50Ω single-ended input impedances.
  • 100Ω differential output impedances.
  • 3.3V or 5V power supply.
  • ICC = 60mA at 5V.
  • 1.3mA standby current.
  • 1.8V and 3.3V logic support for STBY control.
  • Operating temperature (TEP) range: -40°C to +115°C.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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50Ω SE-In – 100Ω DIFF-Out Amplifier 3.0GHz to 4.2GHz F1129MB Datasheet Description The F1129MB is a single-ended input / differential output 3GHz to 4.2GMHz high gain RF amplifier. The combination of impedance translation, high gain, high linearity, and low noise performance makes this device an ideal amplifier for a variety of receiver applications. The F1129MB has been optimized to operate with a single 5V power supply and a nominal 60mA of ICC. When operated at 3.55GHz, the F1129MB provides 19dB typical gain with 1.8dB noise figure and +32dBm OIP3. The F1129MB is pin-compatible with Renesas’ F1129xx family of RF amplifiers, offering additional frequency and output impedance options.