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FX20ASJ-2 - Pch Power MOS FET

Key Features

  • Drive voltage : 4 V.
  • VDSS :.
  • 100 V.
  • rDS(ON) (max) : 0.26 Ω.
  • ID :.
  • 20 A.
  • Integrated Fast Recovery Diode (TYP. ) : 100 ns Outline.

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FX20ASJ-2 High-Speed Switching Use Pch Power MOS FET Features • Drive voltage : 4 V • VDSS : – 100 V • rDS(ON) (max) : 0.26 Ω • ID : – 20 A • Integrated Fast Recovery Diode (TYP.) : 100 ns Outline RENESAS Package code: PRSS0004ZG-A (Package name: MP-3A) 4 12 3 1 3 2, 4 REJ03G1441-0300 Rev.3.00 Dec 19, 2008 1. Gate 2. Drain 3. Source 4. Drain Applications Motor control, Lamp control, Solenoid control, DC-DC converters, etc. Maximum Ratings Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Avalanche drain current (Pulsed) Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Mass Symbol VDSS VGSS ID IDM IDA IS ISM PD Tch Tstg — Ratings –100 ±20 –20 –80 –20 –20 –80 35 – 55 to +150 – 55 to +150 0.