Renesas Electronics H5N3011P
N-Channel MOSFET
| Part No. | H5N3011P |
|---|---|
| Datasheet | H5N3011P Download |
| Manufacturer |  Renesas Electronics |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
● Low on-resistance● Low leakage current
● High speed switching Outline TO-3P D G S 1 2 3
ABSOLUTE MAXIMUM RATINGS
Item Drain to Source voltage Gate to Source voltage Drain current Drain peak current Body-Drain diode reverse Drain current Body-Drain diode reverse Drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. STch = 25°C, Tch ≤ 150°C Symbol VDSS VGSS ID ID Note1 (pulse) IDR IDR Note1 (pulse) IAPNote3 EARNote3 Pch Note2 θch-c Tch Tstg REJ03G0385-0200 Rev.2.00 Aug.05.2004 1. Gate 2. Drain (Flange) 3. Source Ratings 300 ±30 88 176 88 176 30 54 150 0.833 150 –55 to +150 (Ta = 25°C) Unit V V A A A A A mJ W °C/W °C °C Rev.2.00, Aug.05.2004, page 1 of 6 H5N3011PELECTRICAL CHARACTERISTICS
Item Drain to Source breakdown voltage Zero Gate voltage Drain current Gate to Source leak current Gate to Source cutoff voltage Forwar...
