Renesas Electronics H5N5006LM
Silicon N-Channel MOSFET
| Part No. | H5N5006LM |
|---|---|
| Datasheet | H5N5006LM Download |
| Manufacturer |  Renesas Electronics |
| Description | Silicon N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
● Low on-resistance● Low leakage current
● High speed switching
● Low gate charge
● Avalanche ratings Outline RENESAS Package code: PRSS0004AE-A (Package name: LDPAK (L) ) 4 123 H5N5006LD RENESAS Package code: PRSS0004AE-B (Package name: LDPAK (S)-(1) ) 4 123 1. Gate 2. Drain 3. Source 4. Drain H5N5006LS RENESAS Package code: PRSS0004AE-C (Package name: LDPAK (S)-(2) ) 4 D G 123 H5N5006LM S Rev.1.00 Apr 07, 2006 page 1 of 7 H5N5006LD, H5N5006LS, H5N5006LM
ABSOLUTE MAXIMUM RATINGS
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche current Channel dissipation Channel to case Thermal Impedance Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. Tch ≤ 150°C Symbol VDSS VGSS ID ID (pulse) Note 1 IDR IAP Note 3 Pch Note 2 θ ch-c Tch Tstg Ratings 500 ±30 3.5 14 3.5 3.5 50 2.5 150 –55 to +150 (Ta = 25°C) Unit V V A A A A W °C/W °C °C Electrical Char...
