Renesas Electronics H5N5016PL
Silicon N-Channel MOSFET
| Part No. | H5N5016PL |
|---|---|
| Datasheet | H5N5016PL Download |
| Manufacturer |  Renesas Electronics |
| Description | Silicon N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
● Low on-resistance● Low leakage current
● High speed switching
● Built-in fast recovery diode Outline TO-3PL D G S 1 1. Gate 2. Drain (Flange) 3. Source 2 3
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case Thermal Impedance Channel temperature Storage temperature Notes 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. STch = 25°C, Tch ≤ 150°C Symbol VDSS VGSS ID ID (pulse)Note1 IDR IDR (pulse)Note1 IAPNote3 EARNote3 PchNote 2 θch-c Tch Tstg Ratings 500 ±30 50 200 50 200 10 5.5 250 0.5 150 –55 to +150 V V A A A A A mJ W °C /W °C °C Unit Rev.2.00, Jul.02.2004, page 1 of 6 H5N5016PLELECTRICAL CHARACTERISTICS
(Ta = 25°C) Item Drain to source breakdown voltage Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage F...
