Renesas Electronics H7N1004FM
Silicon N-Channel MOSFET
| Part No. | H7N1004FM |
|---|---|
| Datasheet | H7N1004FM Download |
| Manufacturer |  Renesas Electronics |
| Description | Silicon N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
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● Low on-resistance RDS(on) = 25 mΩ typ. Low drive current Available for 4.5 V gate drive Outline TO-220FM D G 1 2 S 1. Gate 2. Drain 3. Source 3 Rev.1.00, Aug.27.2003, page 1 of 9 H7N1004FM
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Symbol VDSS VGSS ID ID (pulse) IDR IAP Note 3 EAR Pch Tch Tstg Note 3 Note 2 Note1 Value 100 ±20 25 100 100 15 22.5 25 150 –55 to +150 Unit V V A A A A mJ W °C °C Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. Value at Tch = 25°C, Rg ≥ 50 Ω Rev.1.00, Aug.27.2003, page 2 of 9 H7N1004FMELECTRICAL CHARACTERISTICS
(Ta = 25°C) Item Drain to source breakdown voltage Symbol Min V(BR)DSS 100 Typ — — — — — 25 30 35 2800 240 140 50 9 11 23 110 70 9.5 0.89 45 Max — — ±10 10 2.5 35 45 — — — — — — — — — — — — — Unit V V µA µA V...
