Renesas Electronics H7N1004FN
Silicon N-Channel MOSFET
| Part No. | H7N1004FN |
|---|---|
| Datasheet | H7N1004FN Download |
| Manufacturer |  Renesas Electronics |
| Description | Silicon N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
● Low on-resistance● RDS(on) = 25 mΩ typ.
● Low drive current
● Available for 4.5 V gate drive Outline RENESAS Package code: PRSS0003AB-A (Package name: TO-220FN) D G 1. Gate 2. Drain 3. Source 1 2 3 S
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. Value at Tch = 25°C, Rg ≥ 50 Ω Symbol VDSS VGSS ID ID (pulse) Note1 IDR IAP EAR Note 3 Pch Note 2 Tch Tstg Note 3 Value 100 ±20 25 100 25 15 22.5 25 150 –55 to +150 Unit V V A A A A mJ W °C °C REJ03G5193-0100 Rev.1.00 Oct 23, 2007 Page 1 of 7 H7N1004FNELECTRICAL CHARACTERISTICS
(Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to...
