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HAF2021L - Silicon N-Channel MOSFET

Download the HAF2021L datasheet PDF. This datasheet also covers the HAF2021 variant, as both devices belong to the same silicon n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

This FET has the over temperature shut

down capability sensing to the junction temperature.

in over temperature shut

down circuit in the gate area.

down the gate voltage in case of high junction temperature lik

Key Features

  • Logic level operation (6 V Gate drive).
  • High endurance capability against to the short circuit.
  • Built.
  • in the over temperature shut.
  • down circuit.
  • Latch type shut.
  • down operation (Need 0 voltage recovery) Outline LDPAK D G Gate resistor Temperature Sensing Circuit www. DataSheet4U. com Latch Circuit Gate Shut-down Circuit S 44 1 2 3 1 2 3 1. Gate 2. Drain 3. Source 4. Drain Rev.2.00, Mar.05.2004, page 1 of 8 HAF2021(L), HAF202.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (HAF2021_RenesasTechnology.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number HAF2021L
Manufacturer Renesas
File Size 127.62 KB
Description Silicon N-Channel MOSFET
Datasheet download datasheet HAF2021L Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
HAF2021(L), HAF2021(S) Silicon N Channel MOS FET Series Power Switching REJ03G0179-0200Z (Previous ADE-208-1459A(Z)) Rev.2.00 Mar.05.2004 Description This FET has the over temperature shut–down capability sensing to the junction temperature. This FET has the built–in over temperature shut–down circuit in the gate area. And this circuit operation to shut–down the gate voltage in case of high junction temperature like applying over power consumption, over current etc. Features • Logic level operation (6 V Gate drive) • High endurance capability against to the short circuit • Built–in the over temperature shut–down circuit • Latch type shut–down operation (Need 0 voltage recovery) Outline LDPAK D G Gate resistor Temperature Sensing Circuit www.DataSheet4U.