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HAF2021 Datasheet Silicon N Channel MOSFET Series Power Switching

Manufacturer: Renesas

Overview: HAF2021(L), HAF2021(S) Silicon N Channel MOS FET Series Power Switching REJ03G0179-0200Z (Previous ADE-208-1459A(Z)) Rev.2.00 Mar.05.

General Description

This FET has the over temperature shut–down capability sensing to the junction temperature.

This FET has the built–in over temperature shut–down circuit in the gate area.

And this circuit operation to shut–down the gate voltage in case of high junction temperature like applying over power consumption, over current etc.

Key Features

  • Logic level operation (6 V Gate drive) High endurance capability against to the short circuit Built.
  • in the over temperature shut.
  • down circuit Latch type shut.
  • down operation (Need 0 voltage recovery) Outline LDPAK D 4 G 4 Gate resistor Temperature Sensing Circuit Latch Circuit Gate Shut-down Circuit 1 1 2 1. Gate 2. Drain 3. Source 4. Drain 3 2 www. DataSheet4U. com S 3 Rev.2.00, Mar.05.2004, page 1 of 8 HAF2021(L), HAF20.

HAF2021 Distributor