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HAF2021 - Silicon N Channel MOSFET Series Power Switching

General Description

This FET has the over temperature shut

down capability sensing to the junction temperature.

in over temperature shut

down circuit in the gate area.

down the gate voltage in case of high junction temperature lik

Key Features

  • Logic level operation (6 V Gate drive) High endurance capability against to the short circuit Built.
  • in the over temperature shut.
  • down circuit Latch type shut.
  • down operation (Need 0 voltage recovery) Outline LDPAK D 4 G 4 Gate resistor Temperature Sensing Circuit Latch Circuit Gate Shut-down Circuit 1 1 2 1. Gate 2. Drain 3. Source 4. Drain 3 2 www. DataSheet4U. com S 3 Rev.2.00, Mar.05.2004, page 1 of 8 HAF2021(L), HAF20.

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Datasheet Details

Part number HAF2021
Manufacturer Renesas
File Size 127.62 KB
Description Silicon N Channel MOSFET Series Power Switching
Datasheet download datasheet HAF2021 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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HAF2021(L), HAF2021(S) Silicon N Channel MOS FET Series Power Switching REJ03G0179-0200Z (Previous ADE-208-1459A(Z)) Rev.2.00 Mar.05.2004 Description This FET has the over temperature shut–down capability sensing to the junction temperature. This FET has the built–in over temperature shut–down circuit in the gate area. And this circuit operation to shut–down the gate voltage in case of high junction temperature like applying over power consumption, over current etc.