HAF2021S Datasheet Silicon N-channel MOSFET

Manufacturer: Renesas

Overview: HAF2021(L), HAF2021(S) Silicon N Channel MOS FET Series Power Switching REJ03G0179-0200Z (Previous ADE-208-1459A(Z)) Rev.2.00 Mar.05.

This datasheet includes multiple variants, all published together in a single manufacturer document.

Datasheet Details

This FET has the over temperature shut–down capability sensing to the junction temperature.

This FET has the built–in over temperature shut–down circuit in the gate area.

And this circuit operation to shut–down the gate voltage in case of high junction temperature like applying over power consumption, over current etc.

Logic level operation (6 V Gate drive).
High endurance capability against to the short circuit.
Built.
in the over temperature shut.
down circuit.
Latch type shut.
down operation (Need 0 voltage recovery) Outline LDPAK D G Gate resistor Temperature Sensing Circuit www. DataSheet4U. com Latch Circuit Gate Shut-down Circuit S 44 1 2 3 1 2 3 1. Gate 2. Drain 3. Source 4. Drain Rev.2.00, Mar.05.2004, page 1 of 8 HAF2021(L), HAF202.

Brand Logo	Part Number	Description	Manufacturer
	HAF2021	Silicon N Channel MOSFET Series Power Switching	Renesas Technology

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