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HAT2057RA - Silicon N-Channel Power MOSFET

Key Features

  • Low on-resistance.
  • Capable of 1.5 V gate drive.
  • Low drive current.
  • High density mounting Outline SOP-8 78 DD 8 7 65 1 234 56 DD 24 GG S1 MOS1 S3 MOS2 1, 3 Source 2, 4 Gate 5, 6, 7, 8 Drain HAT2057RA Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to source voltage Gate to source voltage Drain current Drain peak current Body.
  • drain diode reverse drain current Channel dissipation Channel dissipation VDSS VGSS ID ID(puls.

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Datasheet Details

Part number HAT2057RA
Manufacturer Renesas
File Size 39.57 KB
Description Silicon N-Channel Power MOSFET
Datasheet download datasheet HAT2057RA Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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HAT2057RA Silicon N Channel Power MOS FET High Speed Power Switching ADE-208-1636 (Z) 1st. Edition Feb. 2003 Features • Low on-resistance • Capable of 1.5 V gate drive • Low drive current • High density mounting Outline SOP-8 78 DD 8 7 65 1 234 56 DD 24 GG S1 MOS1 S3 MOS2 1, 3 Source 2, 4 Gate 5, 6, 7, 8 Drain HAT2057RA Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to source voltage Gate to source voltage Drain current Drain peak current Body–drain diode reverse drain current Channel dissipation Channel dissipation VDSS VGSS ID ID(pulse)Note1 IDR Pch Note2 Pch Note3 20 +6,-3 4 32 4 2 3 V V A A A W W Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Notes: 1. PW ≤ 10µs, duty cycle ≤ 1 % 2.