Renesas Electronics HAT2085R
Silicon N-Channel Power MOSFET
FEATURES
● Low on-resistance● Low drive current
● High density mounting Outline RENESAS Package code: PRSP0008DD-D (Package name: SOP-8 <FP-8DAV> ) 87 65 4 G 1234 5678 DDDD SSS 123 REJ03G1181-0200 (Previous: ADE-208-1232) Rev.2.00 Sep 07, 2005 1, 2, 3 4 5, 6, 7, 8 Source Gate Drain Rev.2.00 Sep 07, 2005 page 1 of 3 HAT2085R
ABSOLUTE MAXIMUM RATINGS
Item Symbol Value Drain to source voltage Gate to source voltage VDSS 200 VGSS ±30 Drain current Drain peak current ID 2 ID (pulse) Note 1 16 Body to drain diode reverse drain current IDR 2 Channel dissipation Pch Note 2 2.5 Channel temperature Tch 150 Storage temperature Tstg –55 to +150 Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. When using the glass epoxy board (FR4 40 × 40 × 1.6 mm), PW ≤ 10 s (Ta = 25°C) Unit V V A A A W °C °CELECTRICAL CHARACTERISTICS
(Ta = 25°C) Item Symbol Min Typ Max Unit Test Conditions Drain to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static...