Renesas Electronics HAT2085T
Silicon N-Channel Power MOSFET
| Part No. | HAT2085T |
|---|---|
| Datasheet | HAT2085T Download |
| Manufacturer |  Renesas Electronics |
| Description | Silicon N-Channel Power MOSFET |
| Buy | Stock & Price |
FEATURES
● Low on-resistance● Low drive current
● High density mounting Outline RENESAS Package code: PTSP0008JB-B (Package name: TSSOP-8 <TTP-8DV> ) 8765 4G 1234 5 6 78 D D DD SSS 123 REJ03G0163-0500 Rev.5.00 Nov 27, 2007 1, 2, 3 4 5, 6, 7, 8 Source Gate Drain
ABSOLUTE MAXIMUM RATINGS
Item Symbol Value Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation VDSS VGSS ID ID (pulse) Note 1 IDR Pch Note 2 200 ±30 1.4 11.2 1.4 1.3 Channel temperature Tch 150 Storage temperature Tstg –55 to +150 Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. When using the glass epoxy board (FR4 40 × 40 × 1.6 mm), PW ≤ 10 s (Ta = 25°C) Unit V V A A A W °C °C REJ03G0163-0500 Rev.5.00 Nov 27, 2007 Page 1 of 6 HAT2085TELECTRICAL CHARACTERISTICS
(Ta = 25°C) Item Symbol Min Typ Max Unit Test Conditions Drain to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static...
