HAT2096H
Features
- Capable of 4.5 V gate drive
- Low drive current
- High density mounting
- Low on-resistance
RDS (on) = 4.2 mΩ typ. (at VGS = 10 V)
Outline
RENESAS Package code: PTZZ0005DA-A (Package name: LFPAK)
5 1234
4 G
5 D
S SS 1 23
REJ03G1186-0400 (Previous: ADE-208-1431B)
Rev.4.00 Sep 07, 2005
1, 2, 3 4 5
Source Gate Drain
Rev.4.00 Sep 07, 2005 page 1 of 6
Absolute Maximum Ratings
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Tc = 25 °C
Electrical Characteristics
Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance
Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate to source...
