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HAT2131R
Silicon N Channel Power MOS FET Power Switching
Features
• Low on-resistance • Low drive current • High density mounting • Capable of 4 V gate drive
Outline
RENESAS Package code: PRSP0008DD-D (Package name: SOP-8 )
87 65 1 234
4 G
5678 DDDD
SSS 123
REJ03G1815-0100 Rev.1.00
Jul 17, 2009
1, 2, 3 4 5, 6, 7, 8
Source Gate Drain
Absolute Maximum Ratings
Item
Symbol
Ratings
Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Channel dissipation
VDSS
VGSS
ID ID (pulse) Note1
IDR IDR (pulse) Note1
Pch Note2
350 ±20 0.9 7.2 0.9 7.2 2.5
Channel temperature
Tch 150
Storage temperature
Tstg –55 to +150
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2.
HAT2131R Datasheet
