Datasheet4U Logo Datasheet4U.com

HAT2142H - Silicon N-Channel Power MOSFET

Key Features

  • Capable of 7 V gate drive.
  • Low drive current.
  • High density mounting.
  • Low on-resistance RDS (on) = 35 mΩ typ. (at VGS = 10 V) Outline.

📥 Download Datasheet

Datasheet Details

Part number HAT2142H
Manufacturer Renesas
File Size 101.64 KB
Description Silicon N-Channel Power MOSFET
Datasheet download datasheet HAT2142H Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
HAT2105T Silicon N-Channel MOSFET Renesas Technology
HAT2108R Silicon N-Channel MOSFET Renesas Technology
HAT2114R Silicon N-Channel MOSFET Renesas Technology
HAT2114RJ Silicon N-Channel MOSFET Renesas Technology
HAT2116H Silicon N-Channel MOSFET Renesas Technology

Other Datasheets by Renesas

Part Number Description
HAT2140H Silicon N-Channel Power MOSFET
HAT2141H Silicon N-Channel Power MOSFET
HAT2143H Silicon N-Channel Power MOSFET
HAT2131R Silicon N-Channel Power MOSFET
HAT2168N Silicon N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
HAT2142H Silicon N Channel Power MOS FET Power Switching Features • Capable of 7 V gate drive • Low drive current • High density mounting • Low on-resistance RDS (on) = 35 mΩ typ. (at VGS = 10 V) Outline RENESAS Package code: PTZZ0005DA-A (Package name: LFPAK) 5 4 G 1234 5 D S SS 1 23 Preliminary REJ03G1194-0800 Rev.8.00 Jul 29, 2009 1, 2, 3 4 5 Source Gate Drain Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Tc = 25 °C 3.