HFA3127 Overview
Each array consists of five dielectrically isolated transistors on a mon monolithic substrate. The NPN transistors exhibit a fT of 8GHz while the PNP transistors provide a fT of 5.5GHz. Both types exhibit low noise (3.5dB), making them ideal for high frequency amplifier and mixer applications.
HFA3127 Key Features
- NPN transistor (fT)
- NPN current gain (hFE)
- NPN early voltage (VA)
- PNP transistor (fT)
- 5.5GHz
- PNP current gain (hFE)
- PNP early voltage (VA)
- Noise figure (50Ω) at 1.0GHz
- Collector to collector leakage
- plete isolation between transistors