HFA3128 Datasheet | Renesas

HFA3046, HFA3096, HFA3127, HFA3128 Ultra High Frequency Transistor Arrays FN3076 Rev.16.00 Jan 24, 2019 The HFA3046, HFA3096, HFA3127 and the HFA3128 are ultra high frequency transistor arrays that are fabricated from the Renesas plementary bipolar UHF-1 process. Each array consists of five dielectrically isolated transistors on a mon monolithic substrate. The NPN transistors exhibit a f T of 8GHz while the PNP transistors provide a f T of 5.5GHz. Both types exhibit low noise (3.5d B), making them ideal for high frequency amplifier and mixer applications. The HFA3046 and HFA3127 are all NPN arrays while the HFA3128 has all PNP transistors. The HFA3096 is an NPN-PNP bination. Access is provided to each of the terminals for the individual transistors for maximum application flexibility. Monolithic construction of these transistor arrays provides close electrical and thermal matching of the five transistors. Application note AN9315 illustrates the use of these devices as RF amplifiers. Related Literature For a full list of related documents, visit our website: - HFA3046, HFA3096, HFA3127, HFA3128 device pages Features - NPN transistor (f T) - - - - - . 8GHz - NPN current gain (h FE) - - - - . . . . 130 - NPN early voltage (VA)- - - - . . . . 50V - PNP transistor (f T) - - - - - 5.5GHz - PNP current gain (h FE) - - - - - 60 - PNP early voltage (VA)- -...