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HIP2106A - Low Voltage Driver

Download the HIP2106A datasheet PDF. This datasheet also covers the HIP2105 variant, as both devices belong to the same low voltage driver family and are provided as variant models within a single manufacturer datasheet.

General Description

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2.

6 2.1 Absolute Maximum Ratings

Key Features

  • an input that recognizes a high-impedance state, working together with Renesas multi-phase 3.3V or 5V PWM controllers to prevent negative transients on the controlled output voltage when operation is suspended. This feature eliminates the need for the Schottky diode that may be used in a power system to protect the load from negative output voltage damage. FN8999 Rev.1.00 Jun 6, 2018 Features.
  • Adaptive shoot-through protection (HIP2106A only).
  • HI and LI inputs (HIP2105 only).

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (HIP2105-Renesas.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by Renesas

Part Number Description
HIP2100 High Frequency Half Bridge Driver
HIP2101 High Frequency Half Bridge Driver
HIP2103 Half Bridge Driver
HIP2104 Half Bridge Driver
HIP2105 Low Voltage Driver

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
DATASHEET HIP2105, HIP2106A Low Voltage Driver for Synchronous Rectification The HIP2105 and HIP2106A are high frequency MOSFET drivers optimized to drive two N-channel power MOSFETs in a synchronous buck converter topology. The HIP2105 has HI/LI inputs and the HIP2106A has a single PWM input. Both these drivers, combined with Renesas multi-phase buck PWM controllers, form a complete single-stage core-voltage regulator solution with high-efficiency performance at high switching frequency for advanced microprocessors. The HIP2105 and HIP2106A are biased by a single low voltage supply (5V), minimizing driver switching losses in high MOSFET gate capacitance and high switching frequency applications. Each driver is capable of driving a 3nF load with less than 15ns rise/fall time.