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HIP2211 - High Frequency Half-Bridge Driver

Download the HIP2211 datasheet PDF. This datasheet also covers the HIP2210 variant, as both devices belong to the same high frequency half-bridge driver family and are provided as variant models within a single manufacturer datasheet.

General Description

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2.

6 2.1 Absolute Maximum Ratings

Key Features

  • standard HI/LI inputs and is pin-compatible with popular Renesas bridge drivers such as the HIP2101 and ISL2111. The HIP2210 features a tri-level PWM input with programmable dead time. Its wide operating supply range of 6V to 18V and integrated high-side bootstrap diode supports driving the high-side and low-side NMOS in 100V half-bridge.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (HIP2210-Renesas.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number HIP2211
Manufacturer Renesas
File Size 593.42 KB
Description High Frequency Half-Bridge Driver
Datasheet download datasheet HIP2211 Datasheet

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Other Datasheets by Renesas

Part Number Description
HIP2210 High Frequency Half-Bridge Driver
HIP2060 Half Bridge Power MOSFET
HIP2100 High Frequency Half Bridge Driver
HIP2101 High Frequency Half Bridge Driver
HIP2103 Half Bridge Driver

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Datasheet HIP2210, HIP2211 100V, 3A Source, 4A Sink, High Frequency Half-Bridge Drivers with HI/LI or Tri-Level PWM Input and Adjustable Dead Time The HIP2210 and HIP2211 are 100V, 3A source, 4A sink high-frequency half-bridge NMOS FET drivers. The HIP2211 features standard HI/LI inputs and is pin-compatible with popular Renesas bridge drivers such as the HIP2101 and ISL2111. The HIP2210 features a tri-level PWM input with programmable dead time. Its wide operating supply range of 6V to 18V and integrated high-side bootstrap diode supports driving the high-side and low-side NMOS in 100V half-bridge applications.