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HSM2694 Datasheet PDF

Renesas Electronics HSM2694

Silicon Epitaxial Planar Diode

Part No. HSM2694
Datasheet HSM2694 Download
Manufacturer
Renesas Electronics
Description Silicon Epitaxial Planar Diode
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HSM2694 datasheet page 1 preview

FEATURES

● Low forward resistance. (rf = 0.9 Ω max)
● Low capacitance. (C = 1.2 pF max)
● MPAK package is suitable for high density surface mounting and high speed assembly. Ordering Information Type No. HSM2694 Laser Mark B3 Package Code MPAK Pin Arrangement 3 2 1 (Top View) 1. Cathode 2. Cathode 3. Anode Rev.2.00, Oct.08.2003, page 1 of 4 HVM2694

ABSOLUTE MAXIMUM RATINGS

(Ta = 25°C) Item Symbol Reverse voltage Power dissipation VR Pd *1 Junction temperature Tj Storage temperature Tstg Operation temperature Topr Note: 1. Two device total Value Unit 35 V 150 mW 125 °C −45 to +125 °C −20 to +60 °C

ELECTRICAL CHARACTERISTICS

*1 (Ta = 25°C) Item Symbol Min Typ Max Unit Test Condition Reverse voltage VR Reverse current I R Forward voltage VF Capacitance C Forward resistance r f Note: 1. Per one device 35 — — V IR = 10 µA — — 50 nA V = 25 V R — — 1.0 V IF = 10 mA — — 1.2 pF V = 6 V, f = 1 MHz R — — 0.9 Ω I = 2 mA, f = 100 MHz F Rev.2.00, Oct.08.2003, page 2 of 4 HVM2694 Main Characteristic...
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