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IDT6167LA - CMOS Static RAM

Download the IDT6167LA datasheet PDF. This datasheet also covers the IDT6167SA variant, as both devices belong to the same cmos static ram family and are provided as variant models within a single manufacturer datasheet.

General Description

E E as 16K x 1.

only 1µW operating off a 2V battery.

operate from a single 5V supply, thus simplifying system designs.

Key Features

  • High-speed (equal access and cycle time) high reliability CMOS technology.
  • Military: 25/35/45/55/70/85/100ns (max. ) Access times as fast as 15ns are available. The circuit also offers.
  • Commercial: 15/20/25ns (max. ) a reduced power standby mode. When CS goes HIGH, the circuit.
  • Low power consumption will automatically go to, and remain in, a standby mode as long as CS.
  • Battery backup operation.
  • 2V data retention voltage remains HIGH. This capab.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IDT6167SA-Renesas.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
CMOS Static RAM 16K (16K x 1-Bit) IDT6167SA IDT6167LA OBSOLETE PART Features ◆ High-speed (equal access and cycle time) high reliability CMOS technology. – Military: 25/35/45/55/70/85/100ns (max.) Access times as fast as 15ns are available. The circuit also offers – Commercial: 15/20/25ns (max.) a reduced power standby mode. When CS goes HIGH, the circuit ◆ Low power consumption will automatically go to, and remain in, a standby mode as long as CS ◆ Battery backup operation — 2V data retention voltage remains HIGH. This capability provides significant system-level power (IDT6167LA only) and cooling savings.