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IDT6167LA - CMOS STATIC RAM

General Description

The lDT6167 is a 16,384-bit high-speed static RAM organized as 16K x 1.

The part is fabricated using IDT’s highperformance, high reliability CMOS technology.

Access times as fast as 15ns are available.

Key Features

  • High-speed (equal access and cycle time).
  • Military: 15/20/25/35/45/55/70/85/100ns (max. ).
  • Commercial: 15/20/25/35ns (max. ).
  • Low power consumption.
  • Battery backup operation.
  • 2V data retention voltage (IDT6167LA only).
  • Available in 20-pin CERDIP and Plastic DIP, and 20-pin SOJ.
  • Produced with advanced CMOS high-performance technology.
  • CMOS process virtually eliminates alpha particle softerror rates.
  • Separate.

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Datasheet Details

Part number IDT6167LA
Manufacturer Integrated Device Technology
File Size 63.43 KB
Description CMOS STATIC RAM
Datasheet download datasheet IDT6167LA Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CMOS STATIC RAM 16K (16K x 1-BIT) Integrated Device Technology, Inc. IDT6167SA IDT6167LA FEATURES: • High-speed (equal access and cycle time) — Military: 15/20/25/35/45/55/70/85/100ns (max.) — Commercial: 15/20/25/35ns (max.) • Low power consumption • Battery backup operation — 2V data retention voltage (IDT6167LA only) • Available in 20-pin CERDIP and Plastic DIP, and 20-pin SOJ • Produced with advanced CMOS high-performance technology • CMOS process virtually eliminates alpha particle softerror rates • Separate data input and output • Military product compliant to MIL-STD-883, Class B DESCRIPTION: The lDT6167 is a 16,384-bit high-speed static RAM organized as 16K x 1. The part is fabricated using IDT’s highperformance, high reliability CMOS technology.