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IDT6167SA - CMOS Static RAM

General Description

E E as 16K x 1.

only 1µW operating off a 2V battery.

operate from a single 5V supply, thus simplifying system designs.

Key Features

  • High-speed (equal access and cycle time) high reliability CMOS technology.
  • Military: 25/35/45/55/70/85/100ns (max. ) Access times as fast as 15ns are available. The circuit also offers.
  • Commercial: 15/20/25ns (max. ) a reduced power standby mode. When CS goes HIGH, the circuit.
  • Low power consumption will automatically go to, and remain in, a standby mode as long as CS.
  • Battery backup operation.
  • 2V data retention voltage remains HIGH. This capab.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CMOS Static RAM 16K (16K x 1-Bit) IDT6167SA IDT6167LA OBSOLETE PART Features ◆ High-speed (equal access and cycle time) high reliability CMOS technology. – Military: 25/35/45/55/70/85/100ns (max.) Access times as fast as 15ns are available. The circuit also offers – Commercial: 15/20/25ns (max.) a reduced power standby mode. When CS goes HIGH, the circuit ◆ Low power consumption will automatically go to, and remain in, a standby mode as long as CS ◆ Battery backup operation — 2V data retention voltage remains HIGH. This capability provides significant system-level power (IDT6167LA only) and cooling savings.