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K1522 - 2SK1522

Key Features

  • Low on-resistance High speed switching Low drive current Built-in fast recovery diode (trr = 120 ns) Suitable for motor control, switching regulator, DC-DC converter Outline TO-3PL D G 1 2 3 S 1. Gate 2. Drain 3. Source 2SK1521, 2SK1522 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage 2SK1521 2SK1522 Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Chan.

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Other Datasheets by Renesas

Part Number Description
K1520 Silicon N Channel MOS FET
K1521 2SK1521
K1516 2SK1516
K1519 Silicon N Channel MOS FET
K1572 2SK1572

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding.