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K3233 - 2SK3233

Datasheet Summary

Features

  • Low on-resistance: www. DataSheet4U. com.
  • R DS(on) = 1.1 Ω typ. Low leakage current: IDSS = 1 µA max (at VDS = 500 V) High speed switching: tf = 15 ns typ (at VGS = 10 V, VDD = 250 V, ID = 2.5 A) Low gate charge: Qg = 15 nC typ (at VDD = 400 V, VGS = 10 V, ID = 5 A) Avalanche ratings Outline TO.
  • 220CFM D G 1 2 3 1. Gate 2. Drain 3. Source S 2SK3233 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltag.

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Datasheet Details

Part number K3233
Manufacturer Renesas
File Size 100.12 KB
Description 2SK3233
Datasheet download datasheet K3233 Datasheet
Additional preview pages of the K3233 datasheet.

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Full PDF Text Transcription

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To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) www.DataSheet4U.com Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding.
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