K3235 - 2SK3235

Datasheet Summary

Features

Low on-resistance: R DS(on) = 0.3 Ω typ. Low leakage current: IDSS = 1 µA max (at VDS = 500 V) High speed switching: tf = 50 ns typ (at VGS = 10 V, VDD = 250 V, ID = 7.5 A) Low gate charge: Qg = 48 nC typ (at VDD = 400 V, VGS = 10 V, ID = 15 A) Avalanche ratings Outline TO-3P D G 1 S 2 3 1. Gate 2. Drain (Flange) 3. Source 2SK3235 Absolute Maximum Ratings (Ta = 25°C) www. DataSheet4U. com Item Drain to source voltage Gate to source voltage.

Renesas

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Datasheet Details

Part number	K3235
Manufacturer	Renesas
File Size	100.54 KB
Description	2SK3235
Datasheet	K3235 Datasheet
Additional preview pages of the K3235 datasheet.

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Full PDF Text Transcription

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www.DataSheet4U.com To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding.

Published: Jul 3, 2009 |