K4069
K4069 is N-CHANNEL POWER MOSFET manufactured by Renesas.
DESCRIPTION
The 2SK4069 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier.
FEATURES
- Low on-state resistance
RDS(on)1 = 12 mΩ MAX. (VGS = 10 V, ID = 15 A)
- Low QGD: QGD = 3.2 n C TYP.
- 4.5 V drive available
ORDERING INFORMATION
<R>
PART NUMBER 2SK4069(1)-S27-AY Note 2SK4069-ZK-E1-AY Note 2SK4069-ZK-E2-AY Note
PACKAGE TO-251 (MP-3-b) TO-252 (MP-3ZK) TO-252 (MP-3ZK)
Note Pb-free (This product does not contain Pb in external electrode.)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
Drain Current (DC) (TC = 25°C) Drain Current (pulse) Note1
ID(DC) ID(pulse)
±30 ±120
Total Power Dissipation (TC = 25°C)
PT1 21
Total Power Dissipation
PT2 1.0
Channel Temperature
Tch 150
Storage Temperature Single Avalanche Current Note2 Single Avalanche Energy Note2
Tstg
- 55 to +150 IAS 18 EAS 32.4
V V A A W W °C °C A m J
Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1% 2. Starting Tch = 25°C, VDD = 12 V, RG = 25 Ω, VGS = 20 → 0 V, L = 100 μH
(TO-251) (TO-252)
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information.
Document No. D18032EJ3V0DS00 (3rd edition)
Date Published March 2007 NS CP(K)
Printed in Japan
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