K4090 Datasheet | Renesas

DESCRIPTION The 2SK4090 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES - Low on-state resistance RDS(on)1 = 6.0 mΩ MAX. (VGS = 10 V, ID = 30 A) RDS(on)2 = 11 mΩ MAX. (VGS = 4.5 V, ID = 30 A) - Low gate to drain charge QGD = 6 n C TYP. (VDD = 15 V, ID = 30 A) - 4.5 V drive available - Avalanche capability ratings ORDERING INFORMATION PART NUMBER 2SK4090(1)-S27-AY Note 2SK4090-ZK-E1-AY Note 2SK4090-ZK-E2-AY Note LEAD PLATING Pure Sn (Tin) PACKING Tube 75 p/tube Tape 2500 p/reel Note Pb-free (This product does not contain Pb in external electrode). PACKAGE TO-251 (MP-3-b) typ. 0.34 g TO-252 (MP-3ZK) typ. 0.27 g ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS Gate to Source Voltage (VDS = 0 V) VGSS Drain Current (DC) (TC = 25°C) Drain Current (pulse) Note1 ID(DC) ID(pulse) Total Power Dissipation (TC = 25°C) PT1 Total Power Dissipation (TA = 25°C) PT2 Channel Temperature Tch Storage Temperature Single Avalanche Current Note2 Single Avalanche Energy Note2 Tstg IAS EAS 30 ±20 ±64 ±192 36 1.0 150 - 55 to +150 35 122.5 V V A A W W °C °C A m J Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1% 2. Starting Tch = 25°C, VDD = 15 V, RG = 25 Ω, VGS = 20 → 0 V, L = 0.1 m H (TO-251) (TO-252) The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. D18634EJ1V0DS00 (1st edition) Date Published February 2007 NS CP(K) Printed in...