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M6MGT331S4BKT - CMOS SRAM

Description

The M6MGB/T331S4BKT is a Stacked micro Multi Chip Package (S- µMCP) that contents 32M-bit Flash memory and 4M-bit Static RAM in a 52-pin TSOP for lead free use.

Features

  • 3.3V-only, and high performance non-volatile memory fabricated by CMOS technology for the peripheral circuit and Access Time DINOR (Divided bit-line NOR) architecture for the memory cell. 4M-bit SRAM is a 524,288 bytes / 262,144 words asynchronous SRAM fabricated by silicon-gate CMOS technology. M6MGB/T331S4BKT is suitable for the.

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Datasheet Details

Part number M6MGT331S4BKT
Manufacturer Renesas
File Size 158.58 KB
Description CMOS SRAM
Datasheet download datasheet M6MGT331S4BKT Datasheet
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Full PDF Text Transcription

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www.DataSheet4U.com Preliminary Notice: This is not a final specification. Some parametric limits are subject to change. Renesas LSIs M6MGB/T331S4BKT 33,554,432-BIT (2,097,152 - WORD BY 16-BIT/4,194,304-WORD BY 8-BIT) CMOS 3.3V-ONLY FLASH MEMORY & 4,194,304-BIT (262,144-WORD BY 16-BIT/524,288-WORD BY 8-BIT) CMOS SRAM Stacked - µ MCP (micro Multi Chip Package) Description The M6MGB/T331S4BKT is a Stacked micro Multi Chip Package (S- µMCP) that contents 32M-bit Flash memory and 4M-bit Static RAM in a 52-pin TSOP for lead free use. 32M-bit Flash memory is a 4,194,304 bytes / 2,097,152 words, Features 3.3V-only, and high performance non-volatile memory fabricated by CMOS technology for the peripheral circuit and Access Time DINOR (Divided bit-line NOR) architecture for the memory cell.
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