NP109N04PUG - N-Channel Power MOSFET

Renesas

General Description

The NP109N04PUG is N-channel MOS Field Effect Transistor designed for high current switching applications.

Key Features

Super low on-state resistance RDS(on) = 2.3 mΩ MAX. (VGS = 10 V, ID = 55 A).
High current rating ID(DC) = ±110 A (TO-263).

📥 Download Datasheet

NP109N04PUG n-channel power mosfet by Renesas - Datasheet Preview

Datasheet Details

Part number	NP109N04PUG
Manufacturer	Renesas
File Size	204.66 KB
Description	N-Channel Power MOSFET
Datasheet	NP109N04PUG Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
NP100P02D6	20V P-Channel Enhancement Mode MOSFET	natlinear
NP100P04PDG	MOS FIELD EFFECT TRANSISTOR	NEC
NP100P04PLG	MOS FIELD EFFECT TRANSISTOR	NEC
NP100P06PDG	P-Channel 60V MOSFET	VBsemi
NP100P06PDG	MOS FIELD EFFECT TRANSISTOR	NEC

Other Datasheets by Renesas

Part Number	Description
NP109N04PUK	MOS FIELD EFFECT TRANSISTOR
NP109N055PUJ	N-CHANNEL POWER MOS FET
NP109N055PUK	MOS FIELD EFFECT TRANSISTOR
NP100N04NUJ	MOS FIELD EFFECT TRANSISTOR
NP100N04PUK	MOS FIELD EFFECT TRANSISTOR

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

DATA SHEET MOS FIELD EFFECT TRANSISTOR NP109N04PUG SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The NP109N04PUG is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER LEAD PLATING PACKING NP109N04PUG-E1-AY Note NP109N04PUG-E2-AY Note Pure Sn (Tin) Tape 800 p/reel Note Pb-free (This product does not contain Pb in external electrode). PACKAGE TO-263 (MP-25ZP) typ. 1.5 g FEATURES • Super low on-state resistance RDS(on) = 2.3 mΩ MAX.