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NP109N04PUK - MOS FIELD EFFECT TRANSISTOR

General Description

The NP109N04PUK is N-channel MOS Field Effect Transistor designed for high current switching applications.

Key Features

  • Super low on-state resistance RDS(on) = 1.75 mΩ MAX. (VGS = 10 V, ID = 55 A).
  • Low Ciss: Ciss = 7200 pF TYP. (VDS = 25 V).
  • Designed for automotive.

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Datasheet Details

Part number NP109N04PUK
Manufacturer Renesas
File Size 220.35 KB
Description MOS FIELD EFFECT TRANSISTOR
Datasheet download datasheet NP109N04PUK Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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NP109N04PUK MOS FIELD EFFECT TRANSISTOR Preliminary Data Sheet R07DS0544EJ0100 Rev.1.00 Sep 23, 2011 Description The NP109N04PUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Super low on-state resistance RDS(on) = 1.75 mΩ MAX. (VGS = 10 V, ID = 55 A) • Low Ciss: Ciss = 7200 pF TYP. (VDS = 25 V) • Designed for automotive application and AEC-Q101 qualified Ordering Information Part No. NP109N04PUK-E1-AY ∗1 NP109N04PUK-E2-AY ∗1 Lead Plating Pure Sn (Tin) Tape 800p/reel Packing Taping (E1 type) Taping (E2 type) Note: ∗1. Pb-free (This product does not contain Pb in the external electrode.